کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10136037 | 1645676 | 2018 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of the effect of V-doping on the opto-electrical properties of spray-pyrolized SnS thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
SnS is an earth-abundant material that is a potentially suitable candidate for the absorber layer in solar cells. Here spray-pyrolized SnS thin films doped with vanadium were studied using structural and opto-electrical methods. The thin films have an orthorhombic structure with a preferential (111) crystallographic direction. SnS has an indirect bandgap of around 1.05â¯eV, whereas doping with vanadium changes the band edge and shifts the absorption threshold to around 1.2â¯eV. The photoluminescence study revealed a broad peak related to the band-to-band transition of energy at around 1.2â¯eV and an additional sharp peak positioned at 1.17â¯eV related to vanadium. Additionally, a non-radiative recombination mechanism followed by hopping through band fluctuation barriers has been proposed for photoluminescence quenching at increased temperatures. The conductivity measurements reveal that conductivity weakly increases with V-doping, whereas its activation energy decreases from around 0.38â¯eV to 0.35â¯eV.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 664, 31 October 2018, Pages 60-65
Journal: Thin Solid Films - Volume 664, 31 October 2018, Pages 60-65
نویسندگان
A. Urbaniak, M. PawÅowski, M. Marzantowicz, B. MarÃ, T. Sall,