کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
10148065 | 1646512 | 2018 | 19 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The optimization of the doping level of boron, silicon and nitrogen doped diamond film on Co-cemented tungsten carbide inserts
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Boron doped, silicon doped and nitrogen doped diamond films with different doping level in gas phase are deposited on Co-cemented tungsten carbide (WC-Co) inserts using hot filament chemical vapor deposition (HFCVD) method. Trimethyl borate ((CH3O)3B), tetraethoxysilane (Si(OC2H5)4) and urea (CO(NH2)2) are dissolved in acetone to serve as boron, silicon and nitrogen precursors, respectively. The as-deposited diamond films are characterized by field emission scanning electron microscope (FESEM), Raman spectroscopy and indentation tests. The results suggested that doping source and doping level will affect the surface morphology, growth rate, quality and adhesion of diamond film. The optimized doping level to obtain diamond films deposited on WC-Co substrate for mechanical applications with well faceted crystal, low defect, low cluster structure and high adhesive strength is 5000â¯ppm, 10000â¯ppm and 10000â¯ppm for boron, silicon and nitrogen doping, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 550, 1 December 2018, Pages 280-293
Journal: Physica B: Condensed Matter - Volume 550, 1 December 2018, Pages 280-293
نویسندگان
Liang Wang, Jinfei Liu, Tang Tang, Nan Xie, Fanghong Sun,