کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11008947 | 1840427 | 2018 | 10 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Simulation design of high Baliga's figure of merit normally-off PGaN gate AlGaN/GaN heterostructure field effect transistors with junction field plates
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, we conducted a numerical analysis on novel Normally-off PGaN gate AlGaN/GaN heterostructure field effect transistors with junction field plates (JFP-HFET). The breakdown voltage (BV) was significantly improved with the introduction of the junction field plate (JFP), which can make a rectangular distribution of the electric field in the GaN channel between the gate and the drain. The highest BV of 1340â¯V of JFP-HFET could be achieved with the gate to the drain distance Lgdâ¯=â¯6â¯Î¼m, the length of the P-type region of the JFP Lpâ¯=â¯5.8â¯Î¼m, the thickness of the JFP Tjâ¯=â¯500â¯nm, the doping concentration of P-type region of the JFP Npâ¯=â¯1â¯Ãâ¯1017â¯cmâ3, and the Al fraction of the AlGaN JFP xAlâ¯=â¯0.25. The optimum parameters of the JFP-HFET were achieved by considering both the principle of charge balance and the practical fabrication of the III-V devices. The highest Baliga's figure of merit (BFOM) 1.2â¯GW/cm2 was obtained under the conditions of Lgdâ¯=â¯6â¯Î¼m, Lpâ¯=â¯5.8â¯Î¼m, Tjâ¯=â¯100â¯nm, Npâ¯=â¯6â¯Ãâ¯1017â¯cmâ3, and xAlâ¯=â¯0.3. CV, turn-on and turn-off processes revealed that the JFP-HFET showed better switching characteristics than that of the HFET with metal field plate.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 123, November 2018, Pages 257-266
Journal: Superlattices and Microstructures - Volume 123, November 2018, Pages 257-266
نویسندگان
Zhiyuan Bai, Jiangfeng Du, Hao Wang, Xiaoyun Li, Qi Yu,