کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
11008968 | 1840427 | 2018 | 11 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Tunneling conductance in normal-insulator-superconductor junctions of silicene
ترجمه فارسی عنوان
هدایت تونل در اتصالات عادی مقره-ابررسانای سیلیسن
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
مواد الکترونیکی، نوری و مغناطیسی
چکیده انگلیسی
We theoretically investigate the transport properties of a normal-insulator-superconductor (NIS) junction of silicene in the thin barrier limit. Similar to graphene the tunneling conductance in such NIS structure exhibits an oscillatory behavior as a function of the strength of the barrier in the insulating region. However, unlike in graphene, the tunneling conductance in silicene can be controlled by an external electric field owing to its buckled structure. We also demonstrate the change in behavior of the tunneling conductance across the NIS junction as we change the chemical potential in the normal silicene region. In addition, at high doping levels in the normal region, the period of oscillation of the tunneling conductance as a function of the barrier strength changes from Ï/2 to Ï with the variation of doping in the superconducting region of silicene.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Superlattices and Microstructures - Volume 123, November 2018, Pages 436-446
Journal: Superlattices and Microstructures - Volume 123, November 2018, Pages 436-446
نویسندگان
Surajit Sarkar, Arijit Saha, Suhas Gangadharaiah,