کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1332426 979042 2010 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Crystal growth and properties of Ln2Ag1−xGa10−y (Ln=La, Ce), a disordered variant of the Ce2NiGa10-structure type
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی معدنی
پیش نمایش صفحه اول مقاله
Crystal growth and properties of Ln2Ag1−xGa10−y (Ln=La, Ce), a disordered variant of the Ce2NiGa10-structure type
چکیده انگلیسی

We report the flux growth and characterization of Ln2Ag1−xGa10−y (Ln=La, Ce), a disordered variant of the Ce2NiGa10 structure type. Single crystals of La2Ag1−xGa10−y (x∼0.3; y∼0.6) and Ce2Ag1−xGa10−y (x∼0.3; y∼0.9) were grown by the self-flux method and characterized using single-crystal X-ray diffraction. Transport measurements of Ce2Ag1−xGa10−y (x∼0.3; y∼0.9) reveal metallic behavior with a transition at 3 K. Magnetic measurements indicate antiferromagnetic ordering at 3 K of localized Ce3+ moments for Ce2Ag1−xGa10−y. Magnetoresistance is positive with a maximum value of 16% at 9 T. La2Ag1−xGa10−y exhibits metallic behavior with magnetic susceptibility showing temperature independent paramagnetism. We will compare Ce2Ag1−xGa10−y (x∼0.3; y∼0.9) to Ce2NiGa10 to examine the effects of transition metal substitution and to the related Ce(Ag,Ga)4 phase to examine the effects of crystal structure on the physical properties.

The figure illustrates the structure of Ce2Ag0.7(1)Ga9.1(1), which can be described as a distorted variant of the Ce2NiGa10 structure. The distorted gallium segments are best described as variants of CeGa6 (PuGa6-structure type), and the distorted Ce(Ag,Ga)4-type segments are built of layers of face-sharing tetragonal antiprisms. Here M=Ag+Ga and the shaded atoms are partially occupied.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Solid State Chemistry - Volume 183, Issue 9, September 2010, Pages 1935–1942
نویسندگان
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