کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
1418663 986010 2004 5 صفحه PDF صفحه WORD دانلود کنید
عنوان انگلیسی مقاله ISI
Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
پیش نمایش صفحه اول مقاله
Fabrication of carbon nanotube field effect transistors by AC dielectrophoresis method
چکیده انگلیسی
Single wall carbon nanotubes (SWNTs) suspended in isopropyl alcohol have been placed between two electrodes by AC dielectrophoresis method. The number of SWNTs bridging the two electrodes is controlled by SWNT concentration of the suspension and deposition time. Through selectively burning off the metallic SWNTs by current induced oxidation, the back-gate carbon nanotube field effect transistors (CNTFETs) with a channel current on–off ratio of up to 7 × 105 have been successfully fabricated. The success rate of the CNTFETs in 20 samples is 60%. These results suggest that AC dielectrophoresis placement method is an efficient technique to fabricate CNTFETs with some flexibilities of controlling CNT reconnection, length and orientation.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Carbon - Volume 42, Issue 11, 2004, Pages 2263–2267
نویسندگان
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