کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1486978 1510693 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Al-doped ZnO seed layer-dependent crystallographic control of ZnO nanorods by using electrochemical deposition
چکیده انگلیسی


• Polar and semipolar ZnO NRs were successfully achieved by hydrothermal synthesis.
• Semipolar and polar ZnO NRs were grown on ZnO and AZO/m-sapphire, respectively.
• Al % of AZO/m-sapphire enhanced the lateral growth rate of polar ZnO NRs.

We investigated the effect of an Al-doped ZnO film on the crystallographic direction of ZnO nanorods (NRs) using electrochemical deposition. From high-solution X-ray diffraction measurements, the crystallographic plane of ZnO NRs grown on (1 0 0) ZnO/m-plane sapphire was (1 0 1). The surface grain size of the (100) Al-doped ZnO (AZO) film decreased with increasing Al content in the ZnO seed layer, implying that the Al dopant accelerated the three-dimensional (3D) growth of the AZO film. In addition, it was found that with increasing Al doping concentration of the AZO seed layer, the crystal orientation of the ZnO NRs grown on the AZO seed layer changed from [1 0 1] to [0 0 1]. With increasing Al content of the nonpolar (1 0 0) AZO seed layer, the small surface grains with a few crystallographic planes of the AZO film changed from semipolar (1 0 1) ZnO NRs to polar (0 0 1) ZnO NRs due to the increase of the vertical [0 0 1] growth rate of the ZnO NRs owing to excellent electrical properties.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Research Bulletin - Volume 82, October 2016, Pages 50–54
نویسندگان
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