کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1503954 1510965 2016 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Doping-induced stability in vanadium-doped ZnO quantum well wires (QWW): Combination of DFT calculations within experimental measurements
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
Doping-induced stability in vanadium-doped ZnO quantum well wires (QWW): Combination of DFT calculations within experimental measurements
چکیده انگلیسی


• ZnO quantum well wires (QWW) have grown on glass substrates then doped by Vanadium.
• The V-doping is affecting the structural, morphological and optical properties of QWW.
• The V-doping in ZnO-QWW induced the formation of band tailing in the band gap.
• The interactions with phonons obey to the empirical Urbach law.
• Results of DFT are in good agreement with the lattice compatibility theory.

ZnO quantum well wires (QWW) have grown on glass substrates by an inexpensive, simplified and enhanced spray pyrolysis technique then doped by Vanadium. The effects of V-doping on the structural, morphological and optical properties of the QWW were investigated experimentally and theoretically. The accuracy of control can be achieved on functional performance by adjusting vanadium doping extent. The incorporation of Vanadium in ZnO-QWW induced the formation of band tailing in states. The interactions with phonons and the presence of a tail absorption profile are following the empirical Urbach law. The electronic structure using density functional theory have shown the changes induced by vanadium doping in ZnO-QWW, where the phonon band structure and density of states were reported. The DFT results showed a good agreement with the lattice compatibility theory as well as with the experimental results.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid State Sciences - Volume 57, July 2016, Pages 33–37
نویسندگان
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