Two dimensional electron gas in a hybrid GaN/InGaN/ZnO heterostructure with ultrathin InGaN channel layer

• We calculated 2DEG properties for hybrid GaN/InxGa1−xN/ZnO HEMT structures.
• This paper shows that 2DEG density of these structures can reach over 1×1013 cm−2.
• We investigated effects of ultrathin InGaN channel layer on 2DEG of these structures.
• We propose an optimized device structure to reduced short channel effects.

We investigated the influence of an ultrathin InGaN channel layer on two-dimensional electron gas (2DEG) properties in a newly proposed hybrid GaN/InxGa1−xN/ZnO heterostructure using numerical methods. We found that 2DEG carriers were confined at InGaN/ZnO and GaN/InGaN interfaces. Our calculations show that the probability densities of 2DEG carriers at these interfaces are highly influenced by the In mole fraction of the InGaN channel layer. Therefore, 2DEG carrier confinement can be adjustable by using the In mole fraction of the InGaN channel layer. The influence of an ultrathin InGaN channel layer on 2DEG carrier mobility is also discussed. Usage of an ultrathin InGaN channel layer with a low indium mole fraction in these heterostructures can help to reduce the short-channel effects by improvements such as providing 2DEG with higher sheet carrier density which is close to the surface and has better carrier confinement.