Spin- and valley-polarized transport through ferromagnetic and antiferromagnetic barriers on monolayer MoS2

• We study electron transport through single/double barriers on monolayer MoS2.
• The conductance gc and the polarization oscillate with barrier width d.
• The conductance versus ferromagnetic field M decreases in a fluctuating manner.
• The spin polarization Ps oscillates as a function of M before it becomes 100%.
• As for AFM barriers the conductance exhibits an oscillating behavior for d>20nm.

We study ballistic electron transport through single or double barriers on monolayer MoS2, of width d, in the presence of a ferromagnetic field M or an antiferromagnetic field F. The total conductance gc, its spin-up and spin-down components, and the polarization oscillate with d or the distance b between two barriers. The corresponding oscillation periods are different. The conductance gc versus M decreases in a fluctuating manner with a steep decline at certain value of M. As a function of M the spin polarization Ps oscillates before it becomes 100% while the valley polarization Pv oscillates and steadily increases.