Synthesis of Ge nanostructures on Si substrate by a convenient electrochemical technique at room temperature for different durations

• Ge in low dimension’s nanorods on Si was gown for different deposition time by electrodeposition technique.
• Ge like-cubic nanorods and polycrystalline; lattice constants and elastic strain on Si were calculated.
• The Raman spectra showed that Ge structure shifted slightly towards to the lower frequency compared with bulk Ge.

The electrochemical deposition technique at room temperature was used to study the synthesis of Ge like-cubic nanorods grown on n-type Si (1 0 0) wafer. The effect of deposition time on the morphological, structural and optical properties of nanostructures was investigated. Different Ge morphologies of as-grown on Si were shown by FESEM images. The shape and the dimensions of the structures showed dependence on the deposition time and the film thickness increases with increasing the deposition time. The lattice constants, crystallite size of c-Ge crystal and the strains were calculated. The Raman spectra exhibited slightly downward sift and broader band width in comparison with the bulk-Ge.