Electric-field strength and doping level controlled spin-valley transport in a silicene np junction

• Pure spin current can be realized in a silicene normal-ferromagnetic np junction.
• The 100% spin- and valley-polarized transport could be realized by tuning the electric field.
• The spin-valley polarization depends strongly on the ferromagnetic field.

The performance of np junction, as the basic unit of electronic devices, often determines the prospect of a material. We here investigate the spin- and valley-polarized transport in a silicene np junction, where a ferromagnetic field and a perpendicular electric field are applied in the p-doped region. It is found that pure spin current with valley polarization can be obtained under the control of electric-field strength and doping level, arising from the specific dispersion with spin- and valley-polarizations. By tuning the electric field properly, one can even realize a controllable state that supports 100% spin- and valley-polarized transport. At fixed electric field, we also demonstrate that the ferromagnetic field can greatly affect the ratios of spin- and valley-polarizations. These findings suggest that silicene is a promising material for application in future spintronics and valleytronics devices.