Metalorganic chemical vapor deposited DyScO3 buffer layer in Pt/Bi3.25Nd0.75Ti3O12/DyScO3/Si metal–ferroelectric–insulator–semiconductor diodes

High-k DyScO3 linear dielectric films were considered as a buffer layer for the metal-ferroelectric-insulator-semiconductor (MFIS) structures with Aurivillius Bi3.25Nd0.75Ti3O12 ferroelectric films. The DyScO3 films on Si substrates were amorphous and dense with a smooth surface morphology, showing negligible CV hysteresis and low leakage current. The remnant polarization of ∼20 μC/cm2, dielectric constant ∼400, and the loss tangent ∼0.04 were obtained for the ferroelectric Bi3.25Nd0.75Ti3O12 film on Pt/TiO2/SiO2/Si substrates. The Pt/Bi3.25Nd0.75Ti3O12/DyScO3/Si MFIS capacitors showed a large memory window of 4.0 V and excellent retention up to 1000 s, encouraging results for practical applications in nonvolatile RAM.