One dimensional polar surface dominated GaN nanostructures with zigzag morphology

• Zigzag GaN nanostructures were synthesized by a simple vapor confined CVD method.
• The zigzag wires have length of 30 μm and diameter of 100 nm.
• The side surfaces of the zigzag nanostructures are composed of polar planes.

One dimensional GaN nanostructures with zigzag morphology have been synthesized in large scale by a simple vapor confined chemical vapor deposition (CVD) method. The wires have length and diameter of about 30 μm and 100 nm respectively. The growth process seems to follow a vapor–liquid–solid (VLS) mechanism as evidenced by Au nanoparticles at the end of the wires. The sides surfaces of the diameter-modulated zigzag nanostructures are composed of polar planes {10-11} or {11-22}. The peculiar morphology may result from the minimization of the electrostatic interaction energy caused by polar surface.