کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1607692 1516237 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
New low-dielectric-loss NiZrNb2O8 ceramics for microwave application
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فلزات و آلیاژها
پیش نمایش صفحه اول مقاله
New low-dielectric-loss NiZrNb2O8 ceramics for microwave application
چکیده انگلیسی


• A new low-dielectric-loss NiZrNb2O8 ceramics were prepared by a conventional mixed-oxide route.
• The NiZrNb2O8 ceramics possessed promising microwave dielectric properties in AZrNb2O8 system.
• The crystal structure, sintering behavior and microwave dielectric properties were investigated.

New low-loss NiZrNb2O8 microwave dielectric ceramics were synthesized via conventional mixed oxide route. The morphology, crystal structure and microwave dielectric properties were investigated. It exhibited a monoclinic wolframite crystal structure, with the space group of P2/c  (C2h4). The lattice energy was carried out to evaluate the structural stability and sintering characteristics. Two kinds of grain shapes in dense samples, with similar elements ratios, were observed. Variations in the dielectric constant (εr) were analyzed by relative density and porosity-corrected polarizability. The quality factor (Q × ƒ) was correlated with packing fraction and grain growth. The temperature coefficient of resonant (τƒ) was depended on the dielectric constant. The typical microwave dielectric properties of NiZrNb2O8 were εr = 23.77, Q × ƒ = 40280 GHz, τƒ = −27.5 ppm/°C, sintered at 1200 °C.

The microwave dielectric properties of NiZrNb2O8 ceramics have been reported, which exhibited the same crystal structure with AZrNb2O8 (A = Mn, Mg, Zn and Co) ceramics. The NiZrNb2O8 exhibited promising microwave dielectric properties (εr = 23.77, Q × ƒ = 40280 GHz, τƒ = −27.5 ppm/°C) and low sintering temperature (Ts = 1200 °C) in AZrNb2O8 system.Figure optionsDownload as PowerPoint slide

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Alloys and Compounds - Volume 656, 25 January 2016, Pages 470–475
نویسندگان
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