کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
1641434 | 1517214 | 2016 | 5 صفحه PDF | دانلود رایگان |
• Pure vanadium thin films were GLAD deposited with incident angles of 0, 20 and 85°.
• The films were annealed in atmospheric pressure (air) and vacuum conditions.
• The resistivity evolution was monitored with increasing annealing temperatures.
• Metallic-like electrical properties and columnar features are preserved in vacuum.
• VO2 phase is formed in air for α=0 and 85° samples.
Pure V thin films were dc sputtered with different pressures (0.4 and 0.6 Pa) and particle incident angles α of 0°, 20° and 85°, by using the GLancing Angle Deposition (GLAD) technique. The sputtered films were characterized regarding their electrical resistivity behaviour in atmospheric pressure and in-vacuum conditions as a function of temperature (40–550 °C), in order to control the oxidation process. Aiming at comprehending the oxidation behaviour of the samples, extensive morphological and structural studies were performed on the as-deposited and annealed samples. Main results show that, in opposition to annealing in air, the columnar nanostructures are preserved in vacuum conditions, keeping metallic-like electrical properties.
Journal: Materials Letters - Volume 174, 1 July 2016, Pages 162–166