Modifications of gallium phosphide single crystals using slow highly charged ions and swift heavy ions

GaP single crystals were irradiated with slow highly charged ions (HCI) using 114 keV 129Xe(33–40)+ and with various swift heavy ions (SHI) of 30 MeV I9+ and 374 MeV–2.2 GeV 197Au25+. The irradiated surfaces were investigated by scanning force microscopy (SFM). The irradiations with SHI lead to nanohillocks protruding from the GaP surfaces, whereas no changes of the surface topography were observed after the irradiation with HCI. This result indicates that a potential energy above 38.5 keV is required for surface nanostructuring of GaP. In addition, strong coloration of the GaP crystals was observed after irradiation with SHI. The effect was stronger for higher energies. This was confirmed by measuring an increased extinction coefficient in the visible light region.