Study of damage formation and annealing of implanted III-nitride semiconductors for optoelectronic devices

An n-GaN/n-AlGaN/p-GaN light emitting diode (LED) structure was implanted with Eu ions. High temperature high pressure annealing at 1400 °C efficiently decreases implantation damage and optically activates the Eu ions. However, the electrical properties of the p–n junction deteriorate possibly due to the formation of conducting paths along dislocations during the extreme annealing conditions.