کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
1679765 1518642 2016 3 صفحه PDF سفارش دهید دانلود کنید
عنوان انگلیسی مقاله
Study the radiation damage effects in Si microstrip detectors for future HEP experiments
ترجمه فارسی عنوان
بررسی اثرات آسیب تشعشع در آشکارسازهای مایکرواستریپ Si برای آزمایشات HEP آینده
کلمات کلیدی
آشکارسازهای سیلیکون مایکرواستریپ؛ آسیب تشعشع؛ جریان نشتی؛ میدان الکتریکی؛ مدل سازی و شبیه سازی آشکارساز
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
چکیده انگلیسی

Silicon (Si) detectors are playing a key role in High Energy Physics (HEP) experiments due to their superior tracking capabilities. In future HEP experiments, like upgrade of the Compact Muon Solenoid (CMS) experiment at the Large Hadron Collider (LHC), CERN, the silicon tracking detectors will be operated in a very intense radiation environment. This leads to both surface and bulk damage in Si detectors, which in turn will affect the operating performance of Si detectors. It is important to complement the measurements of the irradiated Si strip detectors with device simulation, which helps in understanding of both the device behavior and optimizing the design parameters needed for the future Si tracking system. An important ingredient of the device simulation is to develop a radiation damage model incorporating both bulk and surface damage. In this work, a simplified two-trap model is incorporated in device simulation to describe the type-inversion. Further, an extensive simulation of effective doping density as well as electric field profile is carried out at different temperatures for various fluences.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 379, 15 July 2016, Pages 262–264
نویسندگان
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