Investigation of change of the composition and structure of the CaF2/Si films surface at the low-energy bombardment

The influence of the bombardment by the Ar+, Ba+ and Na+ ions and the subsequent annealing on composition and electron structure of a surface of the CaF2/Si (1 1 1) films is studied. The energy band diagram of the epitaxial nanofilm systems of the Ca–CaF2–Si type is constructed. Optimum regimes of ion implantation and annealing for the production of three-componental nanodimensional structures of the Ca1−XМеXF2 type are determined and parameters of their energy bands are estimated.