Surface characterization of PZT thin films obtained at various O2 gas ratios

• PZT (Pb(Zr1-xTix)O3) films were fabricated by RF magnetron co-sputtering.
• Ar-ion sputtered depth profile of PZT films were investigated with XPS.
• Physicochemical properties of PZT films were controlled by O2 gas ratio.

We fabricated PZT (Pb(Zr1-xTix)O3, PZT) thin films at various O2 gas ratios by utilizing the radio frequency (RF) magnetron co-sputtering method. Ar-ion sputtered depth profile was performed to investigate both the surface and the bulk region of the PZT thin films. The thickness of the PZT thin films was monitored through the means of a surface profiler and a decrease from 272.7 to 89.7 nm was observed after introducing O2 gas in the sputter gas. Based on the XRD study, the perovskite phase of PZT evolved after O2 gas was introduced to the system. As the O2 gas ratio increased, the portion of Pb increased while Zr and Ti decreased, in which this was confirmed by XPS. The conductivity of the PZT thin films obtained at 0 and 5% of O2 gas ratio in the sputter gas dramatically decreased from 778.6 to 75.4 S/cm, respectively.