کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1808869 1525172 2015 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Electron Raman scattering in semiconductor step-quantum well
ترجمه فارسی عنوان
پراکندگی رامان الکترونی در چاه مرحله ای کوانتومی نیمه هادی
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه فیزیک و نجوم فیزیک ماده چگال
چکیده انگلیسی

The differential cross section for an electron Raman scattering process in a semiconductor GaAs/AlGaAsGaAs/AlGaAs step-quantum well is calculated and expressions for the electronic states are presented. The system is modeled considering T=0K and a single parabolic conduction band, which is split into a subbands system due to the confinement. The gain and differential cross-section for an electron Raman scattering process are obtained. Also, the emission spectra for several scattering configurations are discussed. The interpretation of the singularities found in the spectra is given. The electron Raman scattering studied here can be used to provide direct information about the efficiency of the lasers.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 477, 15 November 2015, Pages 87–93
نویسندگان
, , , ,