کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
227272 | 464820 | 2016 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Metal oxide semiconductor field-effect transistor (MOSFET)-based direct monitoring of p53 in spiked serum
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی شیمی
مهندسی شیمی (عمومی)
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چکیده انگلیسی
We describe the direct monitoring of p53 in a human serum sample by a metal oxide semiconductor field-effect transistor (MOSFET) biosensor. The biomolecular interaction between DNA and p53 protein was measured using a DNA-modified MOSFET under the condition of physiological ionic strength. Treated with p53 in serum, a MOSFET exhibited a comparable change in the drain current, while no alteration in response to serum spiked with DNA binding-defective p53 was observed, leading to a good agreement between theory and experiment. Our data suggest that a MOSFET device can be potentially used for the determination of p53 in serum samples on the basis of DNA–protein interaction.
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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Industrial and Engineering Chemistry - Volume 37, 25 May 2016, Pages 95–100
Journal: Journal of Industrial and Engineering Chemistry - Volume 37, 25 May 2016, Pages 95–100
نویسندگان
Yunkwang Oh, Tran Thi Dung, Younghee Lee, Chang-Soo Lee, Moonil Kim,