کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
227272 464820 2016 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Metal oxide semiconductor field-effect transistor (MOSFET)-based direct monitoring of p53 in spiked serum
موضوعات مرتبط
مهندسی و علوم پایه مهندسی شیمی مهندسی شیمی (عمومی)
پیش نمایش صفحه اول مقاله
Metal oxide semiconductor field-effect transistor (MOSFET)-based direct monitoring of p53 in spiked serum
چکیده انگلیسی

We describe the direct monitoring of p53 in a human serum sample by a metal oxide semiconductor field-effect transistor (MOSFET) biosensor. The biomolecular interaction between DNA and p53 protein was measured using a DNA-modified MOSFET under the condition of physiological ionic strength. Treated with p53 in serum, a MOSFET exhibited a comparable change in the drain current, while no alteration in response to serum spiked with DNA binding-defective p53 was observed, leading to a good agreement between theory and experiment. Our data suggest that a MOSFET device can be potentially used for the determination of p53 in serum samples on the basis of DNA–protein interaction.

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ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Industrial and Engineering Chemistry - Volume 37, 25 May 2016, Pages 95–100
نویسندگان
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