High performance Ge ultra-shallow junctions fabricated by a novel formation technique featuring spin-on dopant and laser annealing for sub-10 nm technology applications

High performance Ge ultra-shallow junctions fabricated by a novel formation technique featuring spin-on dopant and laser annealing for sub-10 nm technology applications

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronic Engineering - Volume 168, 25 January 2017, Pages 1-4

Junkang Li, Ran Cheng, Chang Liu, Pengzhan Zhang, Jiwu Lu, Kunji Chen, Rui Zhang, Yi Zhao,