کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
4971632 1450524 2017 7 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Protective nanometer films for reliable Cu-Cu connections
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
پیش نمایش صفحه اول مقاله
Protective nanometer films for reliable Cu-Cu connections
چکیده انگلیسی
As an indicator of degradation, the oxidation of the Cu surface was used. It could be shown that a C layer provides a much better protective effect than a Pt layer. Besides very local sporadically distributed Cu oxide grains, a gradual degradation of the protective carbon film was not even observable at the nanoscale for a stress temperature of 200 °C and layer thicknesses down to 3 nm. In contrast, with a 10 nm thick Pt film the Cu surface exhibits already at a stress temperature of 150 °C locally grown Cu oxide grains. The introduced carbon coating passivation of Cu surfaces has the potential of being a key technique for a reliable Cu-Cu wire bonding.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volumes 76–77, September 2017, Pages 383-389
نویسندگان
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