The deformation pattern of single crystal β-Ga2O3 under nanoindentation

The deformation of single crystal beta gallium oxide (β-Ga2O3) under nanoindenting was investigated using transmission electron microscopy. The deformation pattern of β-Ga2O3 was found to follow a certain route with the increased indentation load: (i) stacking faults along the (200) lattice planes and twinning structures with (2̅ 01) plane as twin boundary, (ii) dislocations on (101) lattice planes and (iii) lattice bending and cracking. Such a deformation pattern is unique, significantly different from that of Si and other semiconductor materials.