کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5005902 | 1461377 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Silicon-Carbon alloy film formation on Si(100) using SiH4 and CH4 reaction under low-energy ECR Ar plasma irradiation
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Epitaxial growth of Si-C alloy films on Si(100) were achieved in the C fraction range up to about 5Â at% by surface reaction of SiH4 and CH4 under low-energy Ar plasma irradiation without substrate heating in electron-cyclotron-resonance (ECR) plasma chemical-vapor deposition (CVD). Moreover, it was found that the Si-C alloy (C fraction of 1.4Â at%) with an about 1%-larger vertical lattice constant than unstrained Si could be epitaxially grown on Si(100) under perfect lattice matching, which was different from the generally-reported results of tensile-strained Si-C alloy epitaxy on Si(100) at relatively higher temperatures. It was also found that deposition interruption effectively improved crystal quality of the film with an increased strain.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 188-192
Journal: Materials Science in Semiconductor Processing - Volume 70, 1 November 2017, Pages 188-192
نویسندگان
Shogo Sasaki, Masao Sakuraba, Hisanao Akima, Shigeo Sato,