Origins of photoluminescence degradation in porous silicon under irradiation and the way of its elimination

Using of infrared (IR) and photoluminescence (PL) spectroscopy a comparative study of distinctions in composition and photoluminescence properties of porous silicon with different morphology was performed. Basing on the obtained experimental data and conventional theoretical models the main factors were found that have a negative effect on the intensity of PL in porous silicon and its degradation under the impact of directed irradiation in the visible range. With porous silicon as an example having the pores of 50-100 nm in size there was demonstrated a possibility for improving of these characteristics by its chemical treatment in polyacrylic acid.