کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5006146 | 1461384 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effect of intrinsic strain on the optical band gap of single phase nanostructured Cu2ZnSnS4
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
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چکیده انگلیسی
Effect of intrinsic strain on the optical band gap of single phase Cu2ZnSnS4 (CZTS) nanostructures have been studied which have been synthesized by three different methods: ultrasonic assisted vapour deposition (UACVD), microwave and solvothermal in a single step process. X-ray diffraction and Raman studies revealed the formation of single phase CZTS nanostructures. The nanostructured film deposited by UACVD exhibited crystallite size ~20Â nm, optical band gap of 1.4Â eV with intrinsic strain 5.2Ã10â4 whereas the nanostructures grown by solvothermal method have smaller crystal size (~7Â nm) with higher intrinsic strain (~52.9Ã10â4). With increases in the crystallite size from 7Â nm to 20Â nm, the optical band gap of CZTS nanoparticles decreases from 1.72eV to 1.4Â eV. The variation in the optical band gaps of the CZTS nanostructures cannot be fully accounted to the variation in the size of nanoparticles and it has been attributed to the intrinsic strain present in the CZTS nanostructures.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 63, 1 June 2017, Pages 220-226
Journal: Materials Science in Semiconductor Processing - Volume 63, 1 June 2017, Pages 220-226
نویسندگان
Mohd Zubair Ansari, Neeraj Khare,