کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010270 | 1462203 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Study of built-in electric field in active region of GaN/InGaN/AlGaNLEDs by electroreflectance spectroscopy
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Nitride-based heterostructures with InGaN/GaN multiple quantum wells in active region were investigated by electroreflectance spectroscopy. Two spectral lines with the stable difference between their phase parameters and slightly different energies were observed in the electroreflectance spectra under various bias voltages. Using models taking into account interference effects it was shown that electroreflectance signal at low amplitude of modulation voltage originates from the first and the last quantum wells in active region. The difference between built-in electric field strengths in these two quantum wells were estimated as 270-320Â kV/cm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 130, April 2017, Pages 45-48
Journal: Solid-State Electronics - Volume 130, April 2017, Pages 45-48
نویسندگان
Lev P. Avakyants, Artem E. Aslanyan, Pavel Yu. Bokov, Anatoly V. Chervyakov, Kirill Yu. Polozhentsev,