کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010281 | 1462202 | 2017 | 4 صفحه PDF | دانلود رایگان |
- Off-state leakage current in metal gate junctionless nanowire transistors.
- The off-state leakage current is due to tunneling of carriers from silicon layer to metal gate.
- The conduction is due to trap-assisted Fowler-Nordheim tunneling mechanism.
In this paper, the experimental off-state drain leakage current behavior is systematically explored in n- and p-channel junctionless nanowire transistors with HfSiON/TiN/p+-polysilicon gate stack. The analysis of the drain leakage current is based on experimental data of the gate leakage current. It has been shown that the off-state drain leakage current in n-channel devices is negligible, whereas in p-channel devices it is significant and dramatically increases with drain voltage. The overall results indicate that the off-state drain leakage current in p-channel devices is mainly due to trap-assisted Fowler-Nordheim tunneling of electrons through the gate oxide of electrons from the metal gate to the silicon layer near the drain region.
Journal: Solid-State Electronics - Volume 131, May 2017, Pages 20-23