کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5010383 | 1462204 | 2017 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optimization of ohmic contact for AlGaNGaN HEMT by introducing patterned etching in ohmic area
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موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
In this paper, the ohmic contact of AlGaNGaN HEMT was optimized by introducing patterned etching in ohmic area, and the conventional structure and whole etching structure were investigated for comparison. The contact resistance decreased from 0.46 Ω mm for conventional to 0.35 Ω mm and 0.18 Ω mm respectively for the whole etching and patterned etching structures. The current-voltage characteristics between the ohmic electrodes presented sharper slope, higher saturation current and lower knee voltage on patterned etching structures. After Cl2 plasma etching on ohmic area surface of AlGaN, the surface oxide layers and the pollutants were removed, therefore, the surface roughness of the ohmic metal reduced obviously, and the surface morphology improved. Meanwhile, the side area induced in patterned etching provided more extra contact area, which increased the tunneling current. The different apertures and the duty factor of patterned etching were investigated, and the results indicated that the quantity of side area produced in patterned etching dominated the reduction effect of ohmic contact resistance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Solid-State Electronics - Volume 129, March 2017, Pages 114-119
Journal: Solid-State Electronics - Volume 129, March 2017, Pages 114-119
نویسندگان
Wang Chong, Zhao Meng-Di, He Yun-Long, Zheng Xue-Feng, Wei Xiao-Xiao, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue,