Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation

Reduced impurities and improved electrical properties of atomic-layer-deposited HfO2 film grown at a low temperature (100 °C) by Al2O3 incorporation

Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Surface Science - Volume 371, 15 May 2016, Pages 360-364

Tae Joo Park, Youngchol Byun, Robert M. Wallace, Jiyoung Kim,