کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5395461 1505712 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)
موضوعات مرتبط
مهندسی و علوم پایه شیمی شیمی تئوریک و عملی
پیش نمایش صفحه اول مقاله
ARPES study of the epitaxially grown topological crystalline insulator SnTe(111)
چکیده انگلیسی
SnTe is a prototypical topological crystalline insulator, in which the gapless surface state is protected by a crystal symmetry. The hallmark of the topological properties in SnTe is the Dirac cones projected to the surfaces with mirror symmetry, stemming from the band inversion near the L points of its bulk Brillouin zone, which can be measured by angle-resolved photoemission. We have obtained the (111) surface of SnTe film by molecular beam epitaxy on BaF2(111) substrate. Photon-energy-dependence of in situ angle-resolved photoemission, covering multiple Brillouin zones in the direction perpendicular to the (111) surface, demonstrate the projected Dirac cones at the Γ¯ and M¯ points of the surface Brillouin zone. In addition, we observe a Dirac-cone-like band structure at the Γ point of the bulk Brillouin zone, whose Dirac energy is largely different from those at the Γ¯ and M¯ points.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Electron Spectroscopy and Related Phenomena - Volume 219, August 2017, Pages 35-40
نویسندگان
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