Copper electroplating technique for efficient manufacturing of low-cost silicon interposers

• Dry film photoresist was introduced in the through via filling process.
• Cu-TSVs and Cu-pad were electroplated simultaneously, which diminished the interface.
• The method simplifies the process flows and lowers the process costs dramatically.

Through-silicon via (TSV) technology is the heart of 3D integration technology. An approach was proposed to simplify the integrated process flows. Dry film photoresist was introduced in the through via filling process. Cu-TSVs and Cu-pads were formed simultaneously through the electroplating process, which diminished the interface between Cu-TSVs and Cu-pads. This approach simplified the integrated process flows, enhanced the reliability, and lowered the costs dramatically compared with the most preferred TSV fabrication method in the industry today, which would have a broad application in the 3D integration industry.

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