کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
541199 | 1450332 | 2016 | 4 صفحه PDF | دانلود رایگان |
• Boron-doping of silicon from molecular monolayer doping
• Tunneling spectroscopy analysis of the surface
• Surface doping from correlation with numerical simulations
Scanning tunneling spectroscopy was used to investigate surface doping in silicon, based on the grafting of a boron-containing molecular layer and the subsequent thermal diffusion of boron into silicon. Curve fitting of the experimental I(V) characteristics with a planar computation of the tunnel current yields a dopant concentration that is consistent with secondary ion mass spectrometry analyses in the subsurface region. Additional two-point probe electrical measurements performed at variable tip separations indicate a bulk-like transport, that corresponds to a significant diffusion of the boron impurities below the surface of low doped n-type Si wafers. Such results show the interest of multiple-probe scanning tunneling microscopy as a non-invasive technique to determine the electrically active content of doped layers during the fabrication of advanced integrated circuits.
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Journal: Microelectronic Engineering - Volume 149, 5 January 2016, Pages 125–128