Novel homoleptic, dimeric zinc(II) phthalocyanines as gate dielectric for OFET device

- An unsymmetrical phthalocyanine with t-BuCH3 group has been prepared.
- A novel benzene-1,4-diyldimethanimine bridged dimeric zinc-phthalocyanine groups was synthesized.
- The potential of these compounds as gate dielectric were investigated by fabricating bottom gate top contact OFET.

A novel multicomponent system consisting of benzene-1,4-diyldimethanimine bridged dimeric zinc-phthalocyanine groups was synthesized. Firstly, a novel unsymmetrically nitro and 2,4-di-tert-butylphenoxy groups substituted zinc (II) phthalocyanine was synthesized and then nitro group was reduced to amino functional group. All newly synthesized compounds were characterized by UV-Vis, FTIR, 1H-NMR, MALDI-TOF MS and elemental analysis spectral data. The potential of these compounds as gate dielectric were investigated by fabricating bottom gate top contact OFET using poly 3-hexylthiophene-2,5-diyl as active layer. Field effect mobility values of 3.2 × 10−4 cm2/V s was obtained when using ITO-coated glass as gate electrode. It was found that the density of leakage current was about 2 nA/cm2 at 5 V. The capacitance density of 11.8 nF/cm2 was achieved at a frequency of 5 Hz with slightly smaller values at higher frequency.