کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5437859 | 1398178 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical band gap shift in thin LiNbO3 films grown by radio-frequency magnetron sputtering
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Thin polycrystalline LiNbO3 films were deposited by the radio-frequency magnetron sputtering (RFMS) method and ion-beam sputtering (IBS) method under different conditions. Study of the adsorption band edge of fabricated films reveals direct and indirect optical transition. Depending on the particular technological sputtering RFMS regime, the direct energy gap varies from 3.8 to 4.4Â eV. Band tails induced by the defects formation due to the reactive plasma effect on the film structure are responsible for indirect optical transitions in the studied films. Thermal annealing has a prominent effect on trap concentration and strain in as-grown films leading to rise in direct band energy up to 4.4Â eV which is close to the value for bulk LiNbO3.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ceramics International - Volume 43, Issue 16, November 2017, Pages 13565-13568
Journal: Ceramics International - Volume 43, Issue 16, November 2017, Pages 13565-13568
نویسندگان
M. Sumets, O. Ovchinnikov, V. Ievlev, A. Kostyuchenko,