کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5440217 | 1510140 | 2018 | 33 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
High temperature creep of 20 vol%. SiC-HfB2 UHTCs up to 2000 °C and the effect of La2O3 addition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سرامیک و کامپوزیت
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High temperature compressive creep of SiC-HfB2 UHTCs up to 2000 °C has been studied. Microstructural analysis after deformation reveals formation of new phases in the Hf-B-Si and Hf-B-Si-C systems, which are responsible for the poor creep resistance. RE oxide additions have a negative effect reducing the creep resistance of SiC-HfB2 UHTCs. A simplistic analysis for the required creep resistance is described, indicating that only SiC-HfB2 UHTCs could withstand re-entry conditions for 5 min in a single use. However, RE oxide addition to SiC-HfB2 UHTCs does not provide the required creep resistance for them to be candidate materials for hypersonic applications.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of the European Ceramic Society - Volume 38, Issue 1, January 2018, Pages 47-56
Journal: Journal of the European Ceramic Society - Volume 38, Issue 1, January 2018, Pages 47-56
نویسندگان
E. Zapata-Solvas, D. Gómez-GarcÃa, A. DomÃnguez-RodrÃguez, W.E. Lee,