کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5444567 1511111 2017 8 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Shielded hydrogen passivation - a novel method for introducing hydrogen into silicon
ترجمه فارسی عنوان
غلظت هیدروژن محافظ - یک روش جدید برای معرفی هیدروژن به سیلیکون است
موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
چکیده انگلیسی
This paper reports a new approach for exposing materials, including solar cell structures, to atomic hydrogen. This method is dubbed Shielded Hydrogen Passivation (SHP) and has a number of unique features offering high levels of atomic hydrogen at low temperature whilst inducing no damage. SHP uses a thin metallic layer, in this work palladium, between a hydrogen generating plasma and the sample, which shields the silicon sample from damaging UV and energetic ions while releasing low energy, neutral, atomic hydrogen onto the sample. In this paper, the importance of the preparation of the metallic shield, either to remove a native oxide or to contaminate intentionally the surface, are shown to be potential methods for increasing the amount of atomic hydrogen released. Excellent, damage free, surface passivation of thin oxides is observed by combining SHP and corona discharge, obtaining minority carrier lifetimes of 2.2 ms and J0 values below 5.47 fA/cm2. This opens up a number of exciting opportunities for the passivation of advanced cell architectures such as passivated contacts and heterojunctions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy Procedia - Volume 124, September 2017, Pages 267-274
نویسندگان
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