کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
544618 1450539 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The variation of the leakage current characteristics of W/Ta2O5/W MIM capacitors with the thickness of the bottom W electrode
ترجمه فارسی عنوان
تغییرات ویژگی های جریان نشتی خازن های W / T2O5 / W MIM با ضخامت الکترود W bottom
کلمات کلیدی
Ta2O5؛ زبری سطح؛ صاف کردن سطح؛ ارتفاع سد شاتکی موثر
موضوعات مرتبط
مهندسی و علوم پایه مهندسی کامپیوتر سخت افزارها و معماری
چکیده انگلیسی


• The leakage current characteristics can be a function of the bottom electrode of the MIM structure.
• The thickness of the bottom electrode affects the leakage current characteristics through two mechanisms.
• The thickness of the bottom W layer can affect Ta2O5 layer CVD process.
• Rougher surface of the bottom W electrode can result in a smaller effective Schottky barrier height.

In this paper, we will report that the leakage current characteristics can be a function of the bottom electrode. The variation of the bottom tungsten electrode thickness can affect the leakage current characteristics of W/Ta2O5/W MIM capacitors mainly through two mechanisms. The first mechanism is that the Ta2O5 CVD process can be influenced by the W bottom electrode thickness. Experimentally it was observed that the thickness of the Ta2O5 film deposited by CVD is noticeably different for samples with different bottom W electrodes with different thicknesses. The second mechanism is that the surface roughness of the bottom W electrode increases with increasing thickness, resulting in a smaller effective Schottky barrier height. A smaller effective Schottky barrier height will lead to larger leakage current.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Microelectronics Reliability - Volume 61, June 2016, Pages 95–98
نویسندگان
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