کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
5462521 1517177 2018 3 صفحه PDF سفارش دهید دانلود کنید
عنوان انگلیسی مقاله ISI
Improved performance of sputtered Cu2(Sn,Ge)S3 thin film for photovoltaic application via controlled Ge doping
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Improved performance of sputtered Cu2(Sn,Ge)S3 thin film for photovoltaic application via controlled Ge doping
چکیده انگلیسی
Cu2SnS3 (CTS) thin films have been investigated extensively as an absorber layer for photovoltaic applications owing to the use of low-cost and earth-abundant materials. However, the performance of CTS solar cells still suffers from voltage deficit, resulting in a low value of open-circuit voltage (Voc). In this study, we introduce a Ge layer into CTS materials using Ge metal target as a doping source. Subsequently, the sputtered Cu/Ge/Sn precursors are sulfurized under sulfur vapor ambient to form a Cu2(Sn,Ge)S3 (CTGS) thin film. Meanwhile, we also fabricate a CTS solar cell under the same experimental conditions as compared with CTGS solar cell. The Ge layer of thickness approximately 20 nm enhanced the efficiency from 0.45% (CTS) to 3.05% (CTGS), whereas the improvement in performance was limited for Ge layer of thickness more than 20 nm.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 211, 15 January 2018, Pages 130-132
نویسندگان
, , , , , , ,