کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5464146 | 1517196 | 2017 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Negative differential resistance as effect of Zn doping of chemically processed CdS thin film transistors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
- Zn-doped CdS films were used as active layers in thin film transistors.
- Lattice distortions and charge traps as consequence of the Zn doping.
- Negative differential resistance effect due to low saturation mobility.
The performance of Thin Film Transistors (TFTs) with chemically deposited Zn-doped CdS active layers was assessed. Charge carrier traps, induced by structural distortions, were produced by the incorporation of Zn in CdS. This phenomenon was used to engineer the operation mode of these devices. The degradation of the saturation charge-carrier mobility affected the output characteristics of the TFTs, which interestingly exhibited the negative differential resistance (NDR) effect.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Letters - Volume 192, 1 April 2017, Pages 161-164
Journal: Materials Letters - Volume 192, 1 April 2017, Pages 161-164
نویسندگان
Luis A. González, Iyali Carreón-Moncada, Manuel A. Quevedo-López,