کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5465985 | 1517975 | 2017 | 6 صفحه PDF | دانلود رایگان |
- Novel CH3COOH/Ar gas was used to etch Pd thin films.
- Good etch profile with a high degree of anisotropy for Pd films was achieved.
- Etch mechanism was sputter etching with surface oxidation and sidewall protection.
Inductively coupled plasma reactive ion etching of Pd thin films with TiN hard masks was carried out in a CH3COOH/Ar gas mixture. The addition of CH3COOH to Ar gas decreased the etch rate but a good etch profile with a high degree of anisotropy was obtained at 50% CH3COOH/Ar. Variations in the etch parameters showed that high inductively coupled plasma power and dc-bias voltage improved the etch profile. X-ray photoelectron spectroscopy and optical emission spectroscopy results revealed that the Pd films in CH3COOH/Ar gas followed the sputtering etch mechanism assisted by the oxidation and sidewall protection provided by polymer films.
Journal: Thin Solid Films - Volume 637, 1 September 2017, Pages 37-42