کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
5465985 1517975 2017 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Investigation on etching characteristics of Pd thin films using CH3COOH/Ar gas
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Investigation on etching characteristics of Pd thin films using CH3COOH/Ar gas
چکیده انگلیسی


- Novel CH3COOH/Ar gas was used to etch Pd thin films.
- Good etch profile with a high degree of anisotropy for Pd films was achieved.
- Etch mechanism was sputter etching with surface oxidation and sidewall protection.

Inductively coupled plasma reactive ion etching of Pd thin films with TiN hard masks was carried out in a CH3COOH/Ar gas mixture. The addition of CH3COOH to Ar gas decreased the etch rate but a good etch profile with a high degree of anisotropy was obtained at 50% CH3COOH/Ar. Variations in the etch parameters showed that high inductively coupled plasma power and dc-bias voltage improved the etch profile. X-ray photoelectron spectroscopy and optical emission spectroscopy results revealed that the Pd films in CH3COOH/Ar gas followed the sputtering etch mechanism assisted by the oxidation and sidewall protection provided by polymer films.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 637, 1 September 2017, Pages 37-42
نویسندگان
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