ELDRS in SiGe transistors for room and low-temperature irradiation

• The possible physical mechanism of ELDRS effect in the silicon-germanium (SiGe) bipolar transistors is proposed.
• Narrowing of the bandgap in the base region of SiGe transistor eliminates ELDRS at room temperature irradiation.
• ELDRS can appear at low-temperature irradiation in SiGe transistors.

The possible physical mechanism of ELDRS effect in the silicon-germanium (SiGe) bipolar transistors for room and low-temperature irradiation is described. The mechanism is connected with narrowing of the bandgap in transistor base region due to Ge content.