کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5490874 | 1524785 | 2017 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Carrier induced local moment magnetization in p-type Sn1âxMnxTe
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We derive a theory of carrier induced local moment magnetization of p-type Sn1âxMnxTe based on the Hubbard model, kâ·Ïâ electronic structure method (kâ is the electronic wave vector and Ïâ is the relativistic momentum operator) and the statistical paramagnetic approach for the localized moments. The Hubbard model is used to derive an internal exchange magnetic field. The difference in exchange self-energy is expressed in terms of an internal exchange field that is proportional to the parameter U, the onsite Coulomb repulsion, and the spin-density of carriers. In the present theory, the kâ·Ïâ+U model is integrated with the statistical paramagnetic theory for localized spins, which is then solved in a self-consistent manner by adding the exchange field to the applied field. The technique is applied to study the magnetic properties of p-type Sn1âxMnxTe, an important material for spintronics devices. The local moment magnetization calculated using the total magnetic field self-consistently agrees with the experimental observations. Magnetization and the exchange field studied as functions of the applied field, temperature and carrier concentration yield results on expected lines. Ours is a mechanism that is different from the RKKY interaction, normally invoked for carrier induced ferromagnetism and is thus a novelty.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Journal of Magnetism and Magnetic Materials - Volume 436, 15 August 2017, Pages 61-67
Journal: Journal of Magnetism and Magnetic Materials - Volume 436, 15 August 2017, Pages 61-67
نویسندگان
Sashi S. Behera, Pratibha Tripathi, Sanjeev K. Nayak, Gouri S. Tripathi,