کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
5491859 | 1525132 | 2017 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Doping and band engineering by vanadium to enhance the thermoelectric performance in n-type Cu0.008Bi2Te2.7Se0.3
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Polycrystalline bulks of Sc-, Ti-, and V-doped n-type Cu0.008Bi2Te2.7Se0.3 were prepared by melt solidification and spark plasma sintering, and their thermoelectric transport properties were investigated. The lattice thermal conductivity of Cu0.008Bi2Te2.7Se0.3 was slightly reduced by intensified point defect phonon scattering by the substitution of Sc, Ti, and V atoms on the Bi-site. On the other hand, the power factor of Cu0.008Bi2Te2.7Se0.3 was significantly enhanced by doping of V. Through the experimental and theoretical considerations, it was found that the enhanced power factor by V doping is originated from the increased density of states (DOS) effective mass by modified DOS near at Fermi level. Resultantly, an enhanced zT of 0.85 at 300Â K was obtained in 1Â at% V-doped Cu0.008Bi2Te2.7Se0.3 (Cu0.008Bi1.98V0.02Te2.7Se0.3).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Physica B: Condensed Matter - Volume 517, 15 July 2017, Pages 1-5
Journal: Physica B: Condensed Matter - Volume 517, 15 July 2017, Pages 1-5
نویسندگان
Jeong Hoon Lee, Kyu Hyoung Lee, Sung Wng Kim, Sang Il Kim, Soon-Mok Choi, Jong-Young Kim, Se Yun Kim, Jong Wook Roh, Hee Jung Park,