Electron states and electron Raman scattering in a semiconductor step-quantum well wire

The differential cross-section for an electron Raman scattering process in a semiconductor GaAs/AlGaAs step-quantum well wire is calculated and expressions for the electron states are presented. The system is modeled by considering T=0K and also by a single parabolic conduction band, which is split into a sub-band system due to confinement. The net Raman gain for an electron Raman scattering process is obtained. Also, the emission spectra for several scattering configurations are discussed, and the interpretation of the singularities found in the spectra is given. The results obtained in this study are compared with those obtained for other structures, and so it has been demonstrated that the wire shows greater efficiency.