The effects of a geometrical size, external electric fields and impurity on the optical gain of a quantum dot laser with a semi-parabolic spherical well potential

In this paper, a GaAs/AlxGa1−xAs quantum dot laser with a semi-parabolic spherical well potential is assumed. By using Runge-Kutta method the eigenenergies and the eigenstates of valence and conduct bands are obtained. The effects of geometrical sizes, external electric fields and hydrogen impurity on the different electronic transitions of the optical gain are studied. The results show that the optical gain peak increases and red-shifts, by increasing the width of well or barrier, while more increasing of the width causes blue-shift and decreases it. The hydrogen impurity decreases the optical gain peak and blue-shifts it. Also, the increasing of the external electric fields cause to increase the peak of the optical gain, and (blue) red shift it. Finally, the optical gain for 1s-1s and 2s-1s transitions is prominent, while it is so weak for other transitions.