First principle investigation of halogen-doped monolayer g-C3N4 photocatalyst

- The most stable configuration of halogen doped monolayer g-C3N4 is determined.
- Halogen atoms doping narrows the band gap of monolayer g-C3N4.
- Halogen atoms doping increases the light absorption of monolayer g-C3N4.
- Halogen atoms doping reduces the work function of monolayer g-C3N4.

Element doping is an efficient strategy for tuning the electronic structure and improving the photocatalytic activity of graphitic carbon nitride (g-C3N4). Employing the density functional theory computation performed by CASTEP module, we investigated the band structures, electronic and optical properties of monolayer g-C3N4 doped with halogens (F, Cl, Br or I). First, the halogen atoms occupying the interstitial space enclosed by three tri-s-triazine units in the monolayer g-C3N4 unit cell was demonstrated to be the most stable configuration in terms of adsorption energy. On the basis of these interstitial-doped monolayer g-C3N4 systems, it is found that the introduction of halogen atoms leads to various density of states (DOS) and redistribution of the lowest unoccupied molecular orbital (LUMO) and the highest occupied molecular orbital (HOMO). The F atom tends to occupy the valance band and HOMO due to its extremely high electronegativity. By contrast, the Cl, Br and I atoms are involved in the conduction band and LUMO. In sum, the calculation results show that the halogen-doped monolayer g-C3N4 systems have narrowed band gap, increased light absorption and reduced work function, which are conducive to high photocatalytic activity. The conclusions presented in this work indicate the availability of halogen-doped monolayer g-C3N4 with considerable photocatalytic performance.

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